Senior GaN Process Development Engineer (f/m/d)

Dresden, Germany

X-FAB is looking for a senior GaN / Wide Band Gap device and process development engineer to join our global Process Development team, in Dresden, Germany, but working as part of an international organization developing Wide Band Gap technologies

Your role:

• Develop new, innovative and competitive solutions for our GaN and other Wide Band Gap semiconductor technologies.
• Lead the definition and development of novel GaN / Wide Band Gap semiconductor process flows and device architectures.
• Contribute to future strategy and roadmap definition.
• Actively support and drive customer communication and technical support.
• Cooperation with other departments within X-FAB.
• Coordinate collaboration and exchange with internal and external partners.
• Close collaboration with Site Management, Process & Equipment Engineering, YE, Quality and Product Marketing.
• Project management.

 

Your profile:

• You lead the way, take responsibility to make a goal, but also play off to your team members at the right moment.
• You have completed a degree in a related field of study with at least 8 years of specific experience in GaN / Wide Band Gap device & process development.
• You have profound experience in the material-science, development, simulation, characterization and processing of GaN devices.
• You have a customer-oriented mindset and are experienced in customer communication.
• You have an overview of complex contexts and can familiarize yourself with new topics quickly.
• You can communicate your concerns clearly and comprehensibly in an interdisciplinary environment.
• You understand multicultural teamwork is not a buzzword, but the key to mutual success for your team.

Contact person : Mathilde Stenzel

Apply now

---

  Back to list